深圳市微桥科技有限公司

SPC6332-N&P Pair Enhancement Mode MOSFET DataSheet

DESCRIPTION APPLICATIONS
    The SPC6332 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.

FEATURES 
?? N-Channel
20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V
?? P-Channel
-20V/1.0A,RDS(ON)= 520mΩ@VGS=-4.5V
-20V/0.8A,RDS(ON)= 700mΩ@VGS=-2.5V
-20V/0.7A,RDS(ON)= 950mΩ@VGS=-1.8V
?? Super high density cell design for extremely low RDS (ON)
?? Exceptional on-resistance and maximum DC current capability
?? SOT-363 (SC-70-6L) package design

APPLICATIONS
?? Power Management in Note book
?? Portable Equipment
?? Battery Powered System
?? DC/DC Converter
?? Load Switch
?? DSC
?? LCD Display inverter