深圳市微桥科技有限公司

SPN2318-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN2318 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
    This high density process is especially tailored to
minimize on-state resistance.
    These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.

FEATURES
?? 40V/3.9A,RDS(ON)= 56mΩ@VGS=10V
?? 40V/3.5A,RDS(ON)= 62mΩ@VGS=4.5V
?? 40V/2.0A,RDS(ON)= 95 mΩ@VGS= 2.5V
?? Super high density cell design for extremely low RDS (ON)
?? Exceptional on-resistance and maximum DC current capability
?? SOT-23-3L package design

APPLICATIONS
?? Power Management in Note book
?? Portable Equipment
?? Battery Powered System
?? DC/DC Converter
?? Load Switch
?? DSC
?? LCD Display inverter