深圳市微桥科技有限公司

SPN4426-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN4426 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
    This high density process is especially tailored to
minimize on-state resistance.
    These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .

FEATURES
?? 20V/8.0A,RDS(ON)= 28mΩ@VGS= 4.5V
?? 20V/7.0A,RDS(ON)= 38mΩ@VGS= 2.5V
?? 20V/3.0A,RDS(ON)= 42mΩ@VGS= 1.8V
?? Super high density cell design for extremely low RDS (ON)
?? Exceptional on-resistance and maximum DC current capability
?? SOP – 8P package design

APPLICATIONS
?? Power Management in Note book
?? Portable Equipment
?? Battery Powered System
?? DC/DC Converter
?? Load Switch
?? DSC
?? LCD Display inverter