深圳市微桥科技有限公司

SPP2301D-P-Channel Enhancement Mode MOSFETDataSheet

DESCRIPTION
    The SPP2301D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
    This high density process is especially tailored to minimize on-state resistance.
    These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

FEATURES
?? -20V/-2.4A,RDS(ON)=128mΩ@VGS=-4.5V
?? -20V/-2.0A,RDS(ON)=188mΩ@VGS=-2.5V
?? Super high density cell design for extremely low RDS (ON)
?? Exceptional on-resistance and maximum DC current capability
?? SOT-23 package design

APPLICATIONS
?? Power Management in Note book
?? Portable Equipment
?? Battery Powered System
?? DC/DC Converter
?? Load Switch
?? DSC
?? LCD Display inverter