深圳市微桥科技有限公司

SPP4435W-P-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPP4435W is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
    This high density process is especially tailored to
minimize on-state resistance.
    These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .

FEATURES
?? -30V/-9.2A,RDS(ON)= 24mΩ@VGS=- 10V
?? -30V/-7.0A,RDS(ON)= 30mΩ@VGS=-4.5V
?? Super high density cell design for extremely low RDS (ON)
?? Exceptional on-resistance and maximum DC current capability
?? SOP – 8P package design

APPLICATIONS
?? Power Management in Note book
?? Portable Equipment
?? Battery Powered System
?? DC/DC Converter
?? Load Switch
?? DSC
?? LCD Display inverter